Method of making an extreme ultraviolet pellicle

ABSTRACT

The present disclosure relates to an extreme ultraviolet (EUV) pellicle having a pellicle film connected to a pellicle frame. In some embodiments, the EUV pellicle has a substrate, and an adhesive material disposed onto the substrate. A pellicle frame is connected to the substrate by way of the adhesive material. The pellicle frame is configured to mount the substrate to an extreme ultraviolet (EUV) reticle.

REFERENCE TO RELATED APPLICATIONS

This Application is a Continuation of U.S. application Ser. No.14/980,469 filed on Dec. 28, 2015, which is a Continuation of U.S.application Ser. No. 14/259,194 filed on Apr. 23, 2014 (now U.S. Pat.No. 9,256,123 issued on Feb. 9, 2016). The contents of both applicationsare hereby incorporated by reference in their entirety.

BACKGROUND

Extreme ultraviolet lithography (EUVL) is a promising next-generationlithography solution for emerging technology nodes. Integrated chipsformed using EUVL will have minimum feature sizes of less than 32nanometers. Such small feature sizes allow contaminants (e.g., dust,airborne microbes, chemical vapors, etc.) to damage integrated chipsduring fabrication. To prevent such contaminants from damagingintegrated chips, integrated chips are fabricated in clean rooms havinglow levels of contaminants.

However, even the best clean rooms still contain contaminants that canfall on a lithography reticle and cause defects. To prevent suchcontamination of a reticle, many lithography systems use pellicles.Pellicles are optically transmitting thin films (i.e., membranes) thatare disposed over a reticle to provide protection from the effects ofparticulate contamination by preventing contaminant particles fromlanding on a reticle.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a block diagram of some embodiments of an extremeultraviolet lithography (EUVL) system having a pellicle connected to anEUV reticle.

FIG. 2 is a flow diagram of some embodiments of a method of forming apellicle for an EUV reticle.

FIG. 3 is a flow diagram of some embodiments of an additional method offorming a pellicle for an EUV reticle.

FIGS. 4-12 illustrate some embodiments of cross-sectional viewscorresponding to an exemplary method of forming a pellicle for an EUVreticle.

FIG. 13 is a flow diagram of some embodiments of a method for forming anintegrated chip feature on a substrate using an EUV reticle having apellicle.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the disclosure.Specific examples of components and arrangements are described below tosimplify the present provided subject matter. These are, of course,merely examples and are not intended to be limiting. For example, theformation of a first feature over or on a second feature in thedescription that follows may include embodiments in which the first andsecond features are formed in direct contact, and may also includeembodiments in which additional features may be formed between the firstand second features, such that the first and second features may not bein direct contact. In addition, the present disclosure may repeatreference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Extreme ultraviolet radiation (i.e., radiation having wavelengthsbetween 124 nm and 10 nm) is among the most highly absorptive radiationof the electromagnetic spectrum. Due to the high absorption of EUVradiation, pellicles used in extreme ultraviolet lithography (EUVL)systems use very thin, slack-free films having a constant tension thatallow for a high rate of optical transmission. To successfully implementthin films that have a constant tension, a selected film may besupported by a support structure that extends over an EUV reticle.

The support structure used to support a thin film may comprise a meshstructure, having a plurality of hexagon or square openings (e.g., ahoneycomb structure) that allow for transmission of EUV radiation.However, it has been appreciated that due to the high absorption of EUVradiation, the mesh of a support structure may also block EUV radiationand cause substantial non-uniformities in the intensity of EUV radiationincident on an EUV reticle.

Accordingly, the present disclosure relates to a method of forming anEUV pellicle comprising an high quality, optically transmissive pelliclefilm connected to a pellicle frame without a supportive mesh, and anassociated apparatus. In some embodiments, the method is performed byforming a cleaving plane within a substrate at a position parallel to atop surface of the substrate. A pellicle frame is attached to the topsurface of the substrate. The substrate is cleaved along the cleavingplane to form a pellicle film comprising a thinned substrate coupled tothe pellicle frame. Prior to cleaving the substrate, the substrate isoperated upon to reduce structural damage to the top surface ofsubstrate during formation of the cleaving plane and/or during cleavingthe substrate. By operating upon the substrate to reduce structuraldamage to the top surface of substrate during formation of the cleavingplane and/or during cleaving the substrate, degradation (e.g., braking)of the thinned substrate during cleaving is prevented thereby improvingthe durability of the thinned substrate and removing a need for asupport structure.

FIG. 1 illustrates a block diagram of some embodiments of an extremeultraviolet lithography (EUVL) system 100.

The EUVL system 100 comprises a radiation source 102 configured to emitextreme ultraviolet (EUV) radiation 104 (e.g., having wavelengths in arange of about 10 nm to about 130 nm). The emitted EUV radiation 104 issupplied as incident EUV radiation 104 a to a patterning element 106.The patterning element 106 is configured to reflect the incident EUVradiation 104 a, as reflected EUV radiation 104 b, to one or moreoptical elements 120. The one or more optical elements 120 areconfigured to focus the reflected EUV radiation 104 b in a manner thatselective patterns a light sensitive photoresist material 122 disposedover a semiconductor workpiece 124.

The patterning element 106 comprises an EUV pellicle 108, which ismounted over an EUV reticle 116 by way of a pellicle frame 114. The EUVreticle 116 comprises a plurality of reflective layers 115 a-115 nseparated by a plurality of spacer layers 117 a-117 n. In someembodiments, the reflective layers 115 a-115 n may comprise molybdenum(Mo) or ruthenium (Ru) and the spacer layers 117 a-117 n may comprisesilicon (Si). The reflective layers 115 a-115 n are configured toreflect incident EUV radiation 104 a by means of Bragg interferencebetween multi-interlayer interference formed between the reflective andspacer layers, 115 a-115 n and 117 a-117 n, respectively. For example, aray of incident EUV radiation 104 a may be partially reflected at afirst interlayer interface formed between a first reflective layer 115 aand a first spacer layer 117 a and partially reflected at a secondinterlayer interface formed between a second reflective layer 115 b anda second spacer layer 117 b.

The EUV pellicle 108 comprises a pellicle film comprising a thinnedsubstrate 110, which is connected to the pellicle frame 114 by way of anadhesive material 112. The adhesive material 112 may be disposed betweenthe thinned substrate 110 and the pellicle frame 114 along outer edgesof the pellicle frame 114, so that the adhesive material 112 does notinterfere with the incident or reflected EUV radiation, 104 a or 104 b.The thinned substrate 110 is configured to prevent contaminant particlesfrom landing on the EUV reticle 116 and degrading the EUVL system 100(e.g., by keeping contaminant particles away from a plane of focus ofthe EUV reticle 116).

The thinned substrate 110 comprises an unbroken film having asubstantially uniform thickness t between the adhesive material 112. Insome embodiments, the thinned substrate 110 may have a thickness thaving a range of between approximately 50 nm and approximately 200 nm.The unbroken thinned substrate 110 provides for a high quality pelliclefilm (i.e., membrane) that is able to be attached to the pellicle frame114 without using a support structure that may interfere with theincident or reflected EUV radiation, 104 a or 104 b.

In various embodiments, the thinned substrate 110 may comprisecrystalline silicon having a homogenous crystalline framework. In otherembodiments, the thinned substrate 110 may comprise a material having ahigh Young's modulus (e.g., greater than 750 GPa) such as carbonnanotubes (having a Young's modulus of approximately 1,000 GPa),graphene (having a Young's modulus of approximately 1,000 GPa), ordiamond (having a Young's modulus of approximately 1,220 GPa). In someembodiments, the thinned substrate 110 may comprise a material having ahigh Young's modulus abutting a silicon layer disposed along a bottomsurface 111 of the thinned substrate 110 opposing the pellicle frame114. In some embodiments, the thinned substrate 110 may comprisehydrogen and boron dopants. The hydrogen and boron dopants comprise apeak concentration disposed along the bottom surface 111 of the thinnedsubstrate 110. In some embodiments, the hydrogen dopants may comprisehydrogen molecules (H₂) and/or hydrogen ions (H+).

FIG. 2 is a flow diagram of some embodiments of a method 200 of forminga pellicle for an extreme ultraviolet (EUV) reticle.

While the disclosed methods (e.g., method 200 and/or 300) areillustrated and described below as a series of acts or events, it willbe appreciated that the illustrated ordering of such acts or events arenot to be interpreted in a limiting sense. For example, some acts mayoccur in different orders and/or concurrently with other acts or eventsapart from those illustrated and/or described herein. In addition, notall illustrated acts may be required to implement one or more aspects orembodiments of the description herein. Further, one or more of the actsdepicted herein may be carried out in one or more separate acts and/orphases.

At 202, a cleaving plane is formed within a substrate comprising amaterial having a high optical transmission rate. In some embodiments,the substrate may comprise a silicon substrate of crystalline silicon.In other embodiments, the substrate may comprise a material having ahigh Young's modulus (e.g., greater than 750 GPa) such as carbonnanotubes (e.g., single-walled carbon nanotubes), graphene, or diamond.

At 204, a pellicle frame is attached to a top surface of the substrate.

At 206, the substrate is operated upon to reduce structural damage(e.g., prevent breaking of the thinned substrate) to the top surface ofsubstrate during formation of the cleaving plane and/or during cleavingthe substrate (act 212).

In some embodiments, structural damage to the top surface of substratemay be reduced by forming the cleaving plane using a collector speciesand a severing species. For example, at 208, a collection species (e.g.,boron), having a depth that is easily controlled, may be implanted intoa top surface of a substrate. A severing species (e.g., hydrogen),configured weaken the substrate, is subsequently implanted into the topsurface of the substrate, at 210. The severing species is drawn to thecollection species, concentrating the severing species in a peakconcentration along a horizontal cleaving plane extending parallel tothe top surface of the substrate.

In other embodiments, structural damage to the top surface of substratemay be reduced by attaching the pellicle frame to the top surface of thesubstrate using a temporary adhesive material and a perdurable adhesivematerial. The temporary adhesive material is configured to improveadhesion between the pellicle frame and the substrate so that damage tothe substrate is reduced during cleaving.

At 212, the substrate is cleaved along the cleaving plane to reduce athickness of the substrate and to form a pellicle film comprising athinned substrate coupled to the pellicle frame. In some embodiments,the thinned substrate may have a thickness having a range of betweenapproximately 50 nm and approximately 150 nm, for example. After thesubstrate is cleaved, the temporary adhesive material may be removed.

Therefore, method 200 operates upon the substrate to reduce damage tothe thinned substrate used in the EUV pellicle. By reducing damage tothe thinned substrate during formation, the thinned substrate has astructural integrity that allows thinned substrate to act as a pelliclefilm (i.e., membrane) without using a support structure that maygenerate non-uniformities in EUV radiation.

FIG. 3 is a flow diagram of some embodiments of a method 300 of forminga pellicle for an EUV reticle.

At 302, an encapsulating layer is formed onto a top surface of asubstrate.

At 304, a first implantation process is performed to implant acollection species into the substrate though the encapsulating layer. Insome embodiments, the collection species may comprise boron.

At 306, a second implantation process is performed to implant a severingspecies into the substrate though the encapsulating layer. In someembodiments, the severing species may comprise hydrogen. The severingspecies is drawn to the collection species to weaken the structure ofthe substrate along a cleaving plane that is parallel to the top surfaceof the substrate.

At 308, the encapsulating layer is removed. In some embodiments, theencapsulating layer may be removed by exposing the encapsulating layerto an etchant.

At 310, a first anneal process is performed to heat the substrate to afirst temperature. The first anneal process is configured to cause thesevering species to further diffuse within the substrate to the cleavingplane. The implantation of the collection species (act 304) allows forthe temperature of the first anneal process to be reduced, since thecollection species concentrates the severing species along the cleavingplane.

At 312, a pellicle frame is attached to a top surface of the substrateusing a thermoplastic and an adhesive material.

At 314, a force is applied to cleave the substrate along the cleavingplane and to thereby form a thinned substrate coupled to the pellicleframe.

At 316, the thermoplastic is removed by performing a second annealprocess that heats the substrate to a second temperature greater thanthe first temperature.

At 318, the thinned substrate is mounted onto an extreme ultraviolet(EUV) reticle by way of the pellicle frame.

FIGS. 4-12 illustrate cross-sectional views corresponding to someembodiments of an exemplary method of forming a pellicle for an EUVreticle. It will be appreciated that although FIGS. 4-12 are describedwith respect to a method 300, the illustrated cross-sectional views arenot limited such a method.

FIG. 4 illustrates a cross-sectional view 400 of some embodiments of asubstrate corresponding to act 302.

As shown in cross-sectional view 400, an encapsulating layer 406 isformed onto a top surface 404 of a substrate 402. The substrate 402 hasa high optical transmission rate that allows for EUV radiation to passwithout substantially attenuating the amplitude of the EUV radiation. Insome embodiments, the substrate 402 may comprise crystalline siliconhaving a homogenous crystalline framework. In other embodiments, thesubstrate 402 may comprise silicon carbide.

In some embodiments, the substrate 402 may comprise a material having alarge Young's modulus 403 (e.g., a Young's modulus of greater than 750GPa) disposed onto a base substrate 401 (e.g., silicon). In someembodiments, the material having a high Young's modulus 403 may comprisesingle-walled carbon nanotubes, graphene, or diamond, for example.

The encapsulating layer 406 may be formed on the substrate to athickness having a range of between approximately 50 nm andapproximately 300 nm. In some embodiments, the encapsulating layer 406may comprise silicon oxide (SiO₂). In other embodiments, theencapsulating layer 406 may comprise a layer of silicon oxide (SiO₂) andan overlying layer of amorphous silicon. In yet other embodiments, theencapsulating layer 406 may comprise a layer of silicon carbide (SiC).

FIG. 5 illustrates a cross-sectional view 500 of some embodiments of asubstrate corresponding to act 304. As shown in cross-sectional view500, a first implantation process 502 is performed to implant acollection species 504 into the substrate 402 through the encapsulatinglayer 406. Implanting the collection species 504 into the substrate 402through the encapsulating layer 406 allows for the first implantationprocess 502 to use a relatively high implantation energy, which providesfor a more uniform depth of the collection species 504 in the substrate402. In some embodiments, the collection species 504 may comprise boron.In some embodiments, the first implantation process 502 may implantboron into the substrate 402 at an energy of approximately 70 KeV and100 KeV and at a dose of 5×10¹⁵ cm⁻³.

FIG. 6 illustrates a cross-sectional view 600 of some embodiments of asubstrate corresponding to act 306. As shown in cross-sectional view600, a second implantation process 602 is performed to implant asevering species, 604 and 606, into the substrate 402 through theencapsulating layer 406. The collection species 504 causes the severingspecies, 604 and 606, to be concentrated to have a peak concentrationalong a horizontal cleaving plane 608 that is parallel to the topsurface 404 of the substrate 402.

In some embodiments, the severing species, 604 and 606, may comprisehydrogen. In such embodiments, the second implantation process 602results in the formation of hydrogen molecules (H₂) 604 and H+ ions 606within the substrate 402. The formation of hydrogen molecules (H₂) 604in the substrate 402 weakens bonds between atoms along the cleavingplane 608. In some embodiments, the cleaving plane 608 may be located ata depth d_(cle) of between approximately 50 nm and approximately 150 nmfrom the top surface 404 of the substrate 402. For example, in someembodiments, the second implantation process 602 may implant hydrogeninto the substrate 402 at an energy of between 40 KeV and 60 KeV, toform a peak concentration that is approximately 100 nm below the topsurface 404 of the substrate 402. In other embodiments, the depthd_(cle) of the peak concentration may be controlled by controlling theimplantation energy of the second implantation process 602 (e.g.,increasing the implantation energy will increase the depth of the peakconcentration).

FIG. 7 illustrates a cross-sectional view 700 of some embodiments of asubstrate corresponding to act 308. As shown in cross-sectional view700, the encapsulating layer 406 is removed. In some embodiments, theencapsulating layer 406 may be removed by exposing the encapsulatinglayer 406 to an etchant 702. For example, an encapsulating layer 406comprising silicon oxide (SiO₂) may be removed by using an etchant 702comprising hydrofluoric (HF) acid.

FIG. 8 illustrates a cross-sectional view 800 of some embodiments of asubstrate corresponding to act 310. As shown in cross-sectional view800, a first anneal process 802 is performed. The first anneal process802 is performed by operating a first temperature source 804 to raise atemperature of the substrate 402 so that the severing species, 604 and606, diffuse to the cleaving plane 608. In some embodiments, the firsttemperature may comprise a temperature in a range of betweenapproximately 150° C. and approximately 200° C. By implanting thesubstrate 402 with the collection species 504, the temperature of thefirst anneal process 802 is reduced, since the collection species 504localizes the severing species, 604 and 606, to the cleaving plane 608.Reducing the temperature of the first anneal process 802 reduces theenergy provided to hydrogen molecules 604 within the substrate 402, andthereby reduces the chance of hydrogen molecules 604 exploding anddamaging the top surface 404 of the substrate 402.

FIG. 9 illustrates a cross-sectional view 900 of some embodiments of asubstrate corresponding to act 312. As shown in cross-sectional view900, the substrate 402 is attached to a pellicle frame 114 configured tomount a thinned substrate onto an EUV reticle. In some embodiments, thepellicle frame 114 may be connected to the substrate 402 by way of athermoplastic 906 and an adhesive material 112. For example, in someembodiments, the pellicle frame 114 is connected to the substrate 402using an adhesive material 112 positioned along one or more edges of thesubstrate 402 and a thermoplastic 906 positioned along a center of thesubstrate 402 (i.e., between the adhesive material 908). Thethermoplastic 906 is configured to increase adhesion between thepellicle frame 114 and the substrate 402. In some embodiments, thethermoplastic 906 may comprise polymethyl methacrylate (PMMA).

In some embodiments, the substrate 402 may be attached to the pellicleframe 114 in a processing chamber 902 held at an elevated pressure 904.In some embodiments, the elevated pressure 904 may comprise a pressuregreater than or equal to 2 atmosphere. The elevated pressure 904 withinthe processing chamber 902 pushes on the substrate 402, further reducingthe chance of hydrogen molecules (H₂) 604 within the substrate 402exploding and damaging the top surface 404 of the substrate 402. In someembodiments, the first anneal process (act 310) may be performed withinthe processing chamber 902 held at the elevated pressure 904.

FIG. 10 illustrates a cross-sectional view 1000 of some embodiments of asubstrate corresponding to act 314. As shown in cross-sectional view1000, the substrate 402 is cleaved by applying a force 1002 to thesubstrate 402. Cleaving the substrate 402 will cause the substrate tobreak along the cleaving plane 608 comprising the H₂ molecules 604 andthe H+ ions 606, resulting in a thinned substrate 110 and a remaindersubstrate 1004. In some embodiments, the thinned substrate 110 maycomprise a thickness of between 50 nm and 150 nm. In some embodiments,the force 1002 may have a range of between approximately 1 atmosphereand approximately 3 atmospheres. The increased adhesion between thepellicle frame 114 and the substrate 402, provided by the thermoplastic906, reduces damage to the thinned substrate 110 during cleaving of thesubstrate 402.

FIG. 11 illustrates a cross-sectional view 1100 of some embodiments of asubstrate corresponding to act 316. As shown in cross-sectional view1100, a second anneal process is performed. The second anneal process isperformed by operating a second temperature source 1102 to raise atemperature of the substrate 402 to a second temperature that is greaterthan the first temperature. The second temperature removes thethermoplastic 906 from the substrate 402. In some embodiments, a solvent(e.g., argon gas) may be introduced into a processing chamber held atthe second temperature, to improve removal of the thermoplastic 906 fromthe substrate 402. In some embodiments, the second temperature maycomprise a temperature of greater than 225° C. Removal of thethermoplastic 906 leaves the adhesive material 112 between the thinnedsubstrate 110 and the pellicle frame 114.

FIG. 12 illustrates a cross-sectional view 1200 of some embodiments of asubstrate corresponding to act 318. As shown in cross-sectional view1200, the thinned substrate 110 may be mounted to an extreme ultraviolet(EUV) reticle 116 by way of the pellicle frame 114. The EUV reticle 116comprises a plurality of reflective layers 115 a-115 n separated by aplurality of spacer layers 117 a-117 n. The reflective layers 115 a-115n may comprise molybdenum (Mo) or ruthenium (Ru) and the spacer layers117 a-117 may comprise silicon (Si).

FIG. 13 is a flow diagram of some embodiments of a method 1300 forforming an integrated chip feature on a substrate using an EUV reticlehaving a pellicle.

At 1302, a semiconductor substrate is received at an EUV lithography(EUVL) system. The semiconductor substrate may comprise any type ofsemiconductor body (e.g., silicon, silicon-germanium,silicon-on-insulator) such as a semiconductor wafer and/or one or moredie on a wafer, as well as any other type of semiconductor and/orepitaxial layers associated therewith.

At 1304, the EUV lithography tool is operated to expose thesemiconductor substrate to EUV radiation (e.g., having a wavelength ofapproximately 13.5 nm) by way of an EUV reticle connected to a thinnedsubstrate by way of an adhesive material. In various embodiments, thethinned substrate may comprise crystalline silicon having a homogenouscrystalline framework or a material having a high Young's modulus (e.g.,greater than 750 GPa) such as single-walled carbon nanotubes (having aYoung's modulus of approximately 1,000 GPa), graphene (having a Young'smodulus of approximately 1,000 GPa), or diamond (having a Young'smodulus of approximately 1,220 GPa). In some embodiments, the thinnedsubstrate may comprise hydrogen and boron dopants. The hydrogen andboron dopants comprise a peak concentration disposed along a bottomsurface of the thinned substrate opposing the pellicle frame. In someembodiments, the hydrogen dopants may comprise hydrogen molecules (H₂)and/or hydrogen ions (H+).

At 1306, the exposed photoresist material is developed. Developing theselectively exposed photoresist material removes weaker sections of theexposed photoresist material, so as to selectively expose the substrate.

Therefore, the present disclosure relates to a method of forming anextreme ultraviolet (EUV) pellicle comprising a high quality, opticallytransmissive pellicle film connected to a pellicle frame without asupportive mesh, and an associated apparatus.

In some embodiments, the present disclosure relates to an extremeultraviolet (EUV) pellicle. The EUV pellicle comprises a substrate, andan adhesive material disposed onto the substrate. The EUV pelliclefurther comprises a pellicle frame connected to the substrate by way ofthe adhesive material and configured to mount the substrate to anextreme ultraviolet (EUV) reticle.

In other embodiments, the present disclosure relates to an extremeultraviolet (EUV) pellicle. The EUV pellicle comprises a substrate, anda pellicle frame configured to mount the substrate to an extremeultraviolet (EUV) reticle.

In yet other embodiments, the present disclosure relates to an extremeultraviolet (EUV) pellicle. The EUV pellicle comprises a substrate, andan adhesive material disposed onto a first surface of the substrate andconfigured to mount the substrate to a pellicle frame. The substratecomprises one or more dopant species disposed along a second surface ofthe substrate that faces away from the adhesive material.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An extreme ultraviolet (EUV) pellicle,comprising: a substrate; an adhesive material disposed onto thesubstrate; a pellicle frame connected to the substrate by way of theadhesive material and configured to mount the substrate to an extremeultraviolet (EUV) reticle; and wherein a surface of the substrate facingaway from the pellicle frame comprises silicon continuously extendingbetween outermost sidewalls of the substrate.
 2. The EUV pellicle ofclaim 1, wherein the substrate comprises one or more dopants arrangedwithin the silicon along a horizontal line extending between thesidewalls of the substrate, and wherein the horizontal line is parallelto the surface of the substrate facing away from the pellicle frame. 3.The EUV pellicle of claim 2, wherein the one or more dopants comprisehydrogen.
 4. The EUV pellicle of claim 2, wherein the one or moredopants comprise hydrogen and boron.
 5. The EUV pellicle of claim 1,wherein the substrate comprises a material having a Young's modulus thatis greater than or equal to approximately 750 GPa.
 6. The EUV pellicleof claim 5, wherein the substrate further comprises: a silicon layercontacting the material having a Young's modulus that is greater than orequal to approximately 750 GPa.
 7. The EUV pellicle of claim 1, whereinthe substrate comprises carbon nanotubes, graphene, or diamond.
 8. TheEUV pellicle of claim 1, wherein the substrate has a thickness in arange of between approximately 50 nm and approximately 200 nm.
 9. TheEUV pellicle of claim 8, wherein the substrate has a thickness ofapproximately 100 nm.
 10. An extreme ultraviolet (EUV) pellicle,comprising: a substrate; a pellicle frame configured to mount thesubstrate to an extreme ultraviolet (EUV) reticle; and one or moredopants arranged within the substrate along a horizontal line parallelto a surface of the substrate facing away from the pellicle frame. 11.The EUV pellicle of claim 10, wherein the one or more dopants aredisposed along the surface of the substrate facing away from thepellicle frame.
 12. The EUV pellicle of claim 10, wherein the one ormore dopants comprise a first dopant species and a second dopant speciesthat is different than the first dopant species.
 13. The EUV pellicle ofclaim 10, further comprising: an adhesive material disposed on substrateand configured to couple the substrate to the pellicle frame.
 14. TheEUV pellicle of claim 10, wherein the substrate comprises: a siliconlayer; and a material contacting the silicon layer and having a Young'smodulus of greater than or equal to approximately 750 GPa.
 15. The EUVpellicle of claim 14, the material comprises carbon nanotubes, graphene,or diamond.
 16. An extreme ultraviolet (EUV) pellicle, comprising: asubstrate; an adhesive material disposed onto a first surface of thesubstrate and configured to mount the substrate to a pellicle frame; andwherein the substrate comprises one or more dopant species disposedalong a second surface of the substrate that faces away from theadhesive material.
 17. The EUV pellicle of claim 16, wherein the secondsurface of the substrate comprises a first dopant species and a seconddopant species that is different than the first dopant species.
 18. TheEUV pellicle of claim 16, wherein the one or more dopant speciescomprise hydrogen.
 19. The EUV pellicle of claim 16, further comprising:a pellicle frame connected to the substrate by way of the adhesivematerial and configured to mount the substrate to an extreme ultraviolet(EUV) reticle.
 20. The EUV pellicle of claim 19, wherein the substratehas a thickness in a range of between approximately 50 nm andapproximately 200 nm.